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Hynix 8GB (1x 8GB) CL19 DDR4-2666 PC4-21300 1.2V 288-pin UDIMM RAM Module Classification_ram-ddr3-1600-sodimm-8gb-2x-dr-fm 5V Technology DDR3 Error Correction

SKU: 98978382006

4.0
USD104.99 USD138.99

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Ships within 48 hours · Estimated delivery Oct 16 - Oct 21

Description

5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank Configuration 16-chip 512Mx8 Pieces in Kit 2 Compatibility

1TB: 3200MB/s

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR3L 1600 MT/s 240-pin RDIMM RAM module from Samsung

512GB: 122K

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR4 2400 MT/s 288-pin RDIMM RAM module from Hynix

Hynix 8GB (1x 8GB) CL19 DDR4-2666 PC4-21300 1.2V 288-pin UDIMM RAM Module Classification_ram-ddr3-1600-sodimm-8gb-2x-dr-fm 5V Technology DDR3 Error CorrectionProduct Overview This 8GB (1x 8GB) DDR4 2666 MT s RAM module from Hynix is for use in DDR4 compatible systems and operates at 2666 MT s with an overall transfer rate of PC4 21300. This RAM module also operates at a standard voltage of 1. 2V with a CAS Latency of CL19, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.

Exchange/Return Notes
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